MANUFACTURING PROCESS OF COMPOUND SEMICONDUCTOR DEVICE

The title method comprises (A) forming a dielectric thin film(2) on a semiconductor substrate(1), (B) coating the thin film(2) with a photoresist(3) and forming patterns, (C) etching the exposed dielectric thin film(2) on the tilt with respect to the substrate(1), (D) forming a gate(7) on the expose...

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Bibliographic Details
Main Authors PARK, SUNG - HO, KANG, JIN - YOUNG, PARK, HYUNG - MOO
Format Patent
LanguageEnglish
Korean
Published 23.03.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The title method comprises (A) forming a dielectric thin film(2) on a semiconductor substrate(1), (B) coating the thin film(2) with a photoresist(3) and forming patterns, (C) etching the exposed dielectric thin film(2) on the tilt with respect to the substrate(1), (D) forming a gate(7) on the exposed substrate(1), while forming a gate metal(6) on the photoresist film(3) on the opposite tilt to the etching tilt by electronic beam heating, (E) remaining only the gate(7) by etching the gate metal(6), the photoresist film(3) and the dielectric thin film(2) by turn, and (F) forming a source electrode(9), a drain electrode(10) and a gate electrode by forming an ohmic metal(8) with the patterned photoresist film(3a).
Bibliography:Application Number: KR19920023355