METHOD OF PATTERNING SEMICONDUCTOR DEVICE

The pattern of semiconductor device is formed by preparing a reflection preventing film on a etched layer with high reflective index, in order to prevent the effect of multi-interference. The hydrogen bonded amorphous carbon film, which prevents reflection, is formed by PECVD(plasma enhanced chemica...

Full description

Saved in:
Bibliographic Details
Main Author MOON, SEUNG - CHAN
Format Patent
LanguageEnglish
Korean
Published 06.02.1996
Edition6
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:The pattern of semiconductor device is formed by preparing a reflection preventing film on a etched layer with high reflective index, in order to prevent the effect of multi-interference. The hydrogen bonded amorphous carbon film, which prevents reflection, is formed by PECVD(plasma enhanced chemical vapor deposition) method using a gas containing carbon and hydrogen. Ar of N2 gas can be added into the gas in order to activate the reaction. Then the amorphous hydrogen bonded carbon film is removed by reactive ion etching using O2 or CO2 gas.
Bibliography:Application Number: KR19920026718