ROW REDUNDANCY CIRCUIT WITH IMPROVED HIGH INTEGRATION AND RELIBILITY AND SEMICONDUCTOR MEMORY DEVICE THEREOF

• Main Author: PARK, CHAN - JONG
• Format: Patent
• Language: English; Korean
• Published: 21.12.1995
• Edition: 6
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The row redundancy circuit in a semiconductor memory device comprises: a plurality of spare cell array blocks for replacing defected normal memory cells in normal cell array blocks by spare cells; a plurality of spare decoders respectively connected to the spare cell array blocks, for driving a word...