MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device, comprising the steps of forming an oxide film selectively on the surface of a semiconductor substrate; forming a first polycrystalline silicon film on the whole surface and then forming a metallic silicide film on the surface of the first polycrysta...

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Bibliographic Details
Main Authors SHINO, KATSUYA, KODAIRA, YOSUNOBU, HIGASHIZONO, MASAYOSHI
Format Patent
LanguageEnglish
Korean
Published 06.10.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device, comprising the steps of forming an oxide film selectively on the surface of a semiconductor substrate; forming a first polycrystalline silicon film on the whole surface and then forming a metallic silicide film on the surface of the first polycrystalline silicon film; patterning the first polycrystalline silicon film and the metallic silicide film except for the desired areas by a lithographic method; depositing polycrystalline silicon on the whole surface to thereby form a second polycrystalline silicon film and allow it to cover the patterned first polycrystalline silicon film and metallic silicide film; and performing oxidation in a state in which a boundary portion between the first polycrystalline silicon film and the metallic silicide film is not exposed to an oxidizing atmosphere by the presence of the second polycrystalline silicon film, to form an oxide film on the surface.
Bibliography:Application Number: KR19910017052