MULTI-CHANNEL TFT

The multichannel thin film transistor includes a lower gate electrode vertically extended on a substrate, a plurality of sub semiconductor layers having a channel region superposed on the lower gate electrode and ohmic contact region extended from both side of the channel region, the sub semiconduct...

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Bibliographic Details
Main Authors HAN, JONG - IN, KIM, CHOL - SU, KIM, WON - KUN
Format Patent
LanguageEnglish
Korean
Published 28.08.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The multichannel thin film transistor includes a lower gate electrode vertically extended on a substrate, a plurality of sub semiconductor layers having a channel region superposed on the lower gate electrode and ohmic contact region extended from both side of the channel region, the sub semiconductor layers being separated from one another and horizontally extended on the lower gate electrode having a gate insulating layer therebetween, source and drain electrodes which comes into contact with the sub semiconductor layers and ohmic contact region, and a upper gate electrode vertically extended on a gate insulating layer, to cover the channel region.
Bibliography:Application Number: KR19920005291