MAKING METHOD OF TR

• Main Authors: HYON, IL - SON, LEE, U - BONG, JANG, YONG - AM, KO, JAE - WAN, HONG, SANG - KI
• Format: Patent
• Language: English; Korean
• Published: 24.05.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The hot carrier effect of submicron MOSFET device is prevented by a buried lightly doped drain structure formed by the method. The method comprises the steps of; (A) forming a gate oxide layer and gate poly on a P-type silicon substrate; (B) implanting N-type low density impurity; (C) implanting arg...