MAKING METHOD OF TR

The hot carrier effect of submicron MOSFET device is prevented by a buried lightly doped drain structure formed by the method. The method comprises the steps of; (A) forming a gate oxide layer and gate poly on a P-type silicon substrate; (B) implanting N-type low density impurity; (C) implanting arg...

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Bibliographic Details
Main Authors HYON, IL - SON, LEE, U - BONG, JANG, YONG - AM, KO, JAE - WAN, HONG, SANG - KI
Format Patent
LanguageEnglish
Korean
Published 24.05.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The hot carrier effect of submicron MOSFET device is prevented by a buried lightly doped drain structure formed by the method. The method comprises the steps of; (A) forming a gate oxide layer and gate poly on a P-type silicon substrate; (B) implanting N-type low density impurity; (C) implanting argon ion; (D) forming BLDD by a thermal process; (E) forming a spacer on the side wall of a gate oxide layer and gate poly; and (F) forming a source and a drain region by injecting N-type high density impurity.
Bibliography:Application Number: KR19920021059