DEPOSITING METHOD OF BLANKET CVD TUNGSTEN

A deposition method is suggested to form stable blanket CVD tungsten layer during the metalization of the semiconductor device. The deposition proceeds with two steps. In the first step, blanket CVD tungsten layer is formed by SiH4 reduction reaction for 30 second on the state of the H2 flow rate of...

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Bibliographic Details
Main Authors KIM, YONG - SON, LEE, HYONG - KYU, PARK, SON - HU, PARK, YONG - UK
Format Patent
LanguageEnglish
Korean
Published 22.05.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A deposition method is suggested to form stable blanket CVD tungsten layer during the metalization of the semiconductor device. The deposition proceeds with two steps. In the first step, blanket CVD tungsten layer is formed by SiH4 reduction reaction for 30 second on the state of the H2 flow rate of 3,000, SiH4 of 100, and WF6 of 300 SCCM at pressure 0.3 Torr and temperature 400 C. In the second step, blanket CVD tungsten layer is formed by H2 reduction reaction for 300 second on the state of the H2 flow rate of 6,800, and WF6 of 400 SCCM at pressure 30 Torr and temperature 400 C.
Bibliography:Application Number: KR19910020525