METHOD OF AND APPARATUS FOR CUTTING INTERCONNECTION PATTERN WITH LASER

In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam (5) having a pulse width of 10<-> second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device (8), such as a link used for redundant...

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Bibliographic Details
Main Authors MIYAUCHI, TAKEOKI, MARUYAMA, SHIGENOBU, YAMAGUCHI, HIROSHI, HONGO, MIKIO, MIZUKOSHI, KATSURO, MORITA, KOYO
Format Patent
LanguageEnglish
Korean
Published 15.02.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam (5) having a pulse width of 10<-> second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device (8), such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.
Bibliography:Application Number: KR19910007933