SEMICONDUCTOR DEVICE WITH A HIGH CAPACITANCE CAPACITOR AND FABRICATING METHOD THEREOF

The semiconductor device includes a conductive structure formed on the semiconductor substrate, a first electrode portion having an insulating film, an conductive silicon layer grown through the pinholes of the insulating film on the conductive structure, a second electrode portion formed on the fir...

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Bibliographic Details
Main Authors KIM, SONG - TAE, LEE, HYONG - KYU, KO, JAE - HONG
Format Patent
LanguageEnglish
Korean
Published 26.12.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device includes a conductive structure formed on the semiconductor substrate, a first electrode portion having an insulating film, an conductive silicon layer grown through the pinholes of the insulating film on the conductive structure, a second electrode portion formed on the first electrode portion, and a dielectric film formed between the first and second electrode portions. The method increases the capacitance of the capacitor.
Bibliography:Application Number: KR19910023473