MANUFACTURING METHOD OF LASER DIODE
a first epitaxy process to sequentially form a first clad layer of a conductive type, an active layer of a first or second conductive type, a second clad layer of a second conductive type, and a current blocking layer of a first conductive type; etching process to remove a specific portion of the cu...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
03.12.1994
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| Edition | 5 |
| Online Access | Get full text |
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| Summary: | a first epitaxy process to sequentially form a first clad layer of a conductive type, an active layer of a first or second conductive type, a second clad layer of a second conductive type, and a current blocking layer of a first conductive type; etching process to remove a specific portion of the current blocking layer in a predetermined thickness; a second epitaxy process for liquid-etching the current blocking layer to form an aperture which exposes the second clad layer and then forms a second conductive type cap layer; forming an insulating layer on the surface of the cap layer excluding the portion which corresponds to the aperture; and forming first and second type of electrodes. |
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| Bibliography: | Application Number: KR19910020270 |