MANUFACTURING METHOD OF SURFACE EMITTING LASER DIODE
The method for fabricating a surface emitting laser diode includes the steps of: sequentially forming a base layer, first clad layer, active layer, second clad layer and cap layer on a semiconductor substrate; selectively etching the layers to expose a predetermined portion of the substrate; thereby...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
03.12.1994
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| Edition | 5 |
| Online Access | Get full text |
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| Summary: | The method for fabricating a surface emitting laser diode includes the steps of: sequentially forming a base layer, first clad layer, active layer, second clad layer and cap layer on a semiconductor substrate; selectively etching the layers to expose a predetermined portion of the substrate; thereby forming a semiconductor laser diode region and mirror reflection region; forming a dielectric layer on the overall surface of the substrate; carrying out selective etching, wet etching and micro-cleaving to form a cleavage plane of the laser diode region; removing the dielectric layer; and forming electrodes on the cap layer and back side of the substrate. |
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| Bibliography: | Application Number: KR19910019694 |