SEMICONDUCTOR DEVICE WITH MOS TRANSISTOR AND BIPOLAR TRANSISTOR

A composite circuit including a MOS transistor and a bipolar transistor to be driven by the MOS transistors and forming an output stage, a logical inverter circuit connected to an output terminal of the composite circuit to invert the level of the output signal, and a MOS transistor having a source...

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Bibliographic Details
Main Authors IWAMURA, MASAHIRO, MASUDA, IKURO
Format Patent
LanguageEnglish
Published 24.10.1994
Edition5
Subjects
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Summary:A composite circuit including a MOS transistor and a bipolar transistor to be driven by the MOS transistors and forming an output stage, a logical inverter circuit connected to an output terminal of the composite circuit to invert the level of the output signal, and a MOS transistor having a source and a drain thereof parallelly connected across a collector and an emitter of the bipolar transistor are provided. When the bipolar transistor conducts with a voltage drop associated with a base-emitter voltage, the parallelly connected MOS transistor renders the bipolar transistor completely conductive so that a level-shiftless output signal is produced.
Bibliography:Application Number: KR19860000656