SEMICONDUCTOR DEVICE WITH MOS TRANSISTOR AND BIPOLAR TRANSISTOR
A composite circuit including a MOS transistor and a bipolar transistor to be driven by the MOS transistors and forming an output stage, a logical inverter circuit connected to an output terminal of the composite circuit to invert the level of the output signal, and a MOS transistor having a source...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
24.10.1994
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | A composite circuit including a MOS transistor and a bipolar transistor to be driven by the MOS transistors and forming an output stage, a logical inverter circuit connected to an output terminal of the composite circuit to invert the level of the output signal, and a MOS transistor having a source and a drain thereof parallelly connected across a collector and an emitter of the bipolar transistor are provided. When the bipolar transistor conducts with a voltage drop associated with a base-emitter voltage, the parallelly connected MOS transistor renders the bipolar transistor completely conductive so that a level-shiftless output signal is produced. |
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Bibliography: | Application Number: KR19860000656 |