METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE

• Main Authors: KIM, YONG - BAE, KIM, BYONG - RYOL, PARK, MUN - KYU
• Format: Patent
• Language: English; Korean
• Published: 15.10.1994
• Edition: 5
• Subjects: ELECTRICITY

forming a polysilicon layer and heavily doped polysilicon layer in an alternation manner on an interlevel insulating layer formed on a MOS transistor formed on a substrate, to be connected to the drain or source of the MOS transistor; forming a trench on a contact region in which the drain of the MOS transistor and a storage node of a capacitor are connected to each other; forming a polysilicon layer on the overall surface of the substrate to form the storage node in the trench; patterning the layers placed on the trench, selectively removing the heavily doped polysilicon layer, forming a dielectric layer on the overall surface of the substrate; and forming a plate electrode on the dielectric layer; thereby forming a fin-structure capacitor.