MAKING METHOD FOR TEST PATTERN

The manufacturing method comprises the steps of, forming oxide layer on silicone substrate, carrying out photo/etch process on the said oxide layer, ion injecting into a portion where the said oxide layer is removed and diffusing the said ion in the said silicone substrate to form ion diffusion laye...

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Bibliographic Details
Main Author HAN, YONG - KYU
Format Patent
LanguageEnglish
Korean
Published 23.04.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The manufacturing method comprises the steps of, forming oxide layer on silicone substrate, carrying out photo/etch process on the said oxide layer, ion injecting into a portion where the said oxide layer is removed and diffusing the said ion in the said silicone substrate to form ion diffusion layer, depositing doped polysilicone layer to keep the said doped polysilicone layer only on the portion removed of the oxide layer, thereby enabling measuring of the length of effective channel.
Bibliography:Application Number: KR19910005773