METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

A method of producing a NAND type ROM in which are alternatingly arranged first and second gate electrodes are formed through two different steps. The data is written by introducing impurity into the surface of an impurity layer just under each gate electrode. The conductivity type of this impurity...

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Bibliographic Details
Main Author KANEBAKO, KAZUNORI
Format Patent
LanguageEnglish
Korean
Published 04.04.1994
Edition5
Subjects
ELECTRICITY
Online AccessGet full text

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