METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

• Main Author: KANEBAKO, KAZUNORI
• Format: Patent
• Language: English; Korean
• Published: 04.04.1994
• Edition: 5
• Subjects: ELECTRICITY

A method of producing a NAND type ROM in which are alternatingly arranged first and second gate electrodes are formed through two different steps. The data is written by introducing impurity into the surface of an impurity layer just under each gate electrode. The conductivity type of this impurity is opposite to that of the layer. The region of the first gate electrode is doped after the electrode, has been formed and the dopant is energised to penetrate the electrode. On the other hand, the region of the second gate electrode is doped before the electrode is formed and the dopant is less energised so that it will not penetrate the first gate electrode. When the data is written through the first gate electrode, the impurity is introduced to that region of the substrate when the second gate electrode is to be formed. To cancel this the impurity is introduced in advance into the substrate. @(27pp Dwg.No.0/1).