INTEGRATED MEMORY CIRCUIT

Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and erasing voltage at which an (E)EPROM has to be operated. During the programming cycle the...

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Bibliographic Details
Main Authors CUPPENS, ROGER, HARTGRING, CORNELIS D
Format Patent
LanguageEnglish
Korean
Published 08.03.1993
Edition5
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and erasing voltage at which an (E)EPROM has to be operated. During the programming cycle the said field effect transistors are kept in the current-non-conducting state, whilst recording the logic information obtained by the logic operations, the "fast" transistors are nevertheless capable of withstanding the said comparatively high voltage.
Bibliography:Application Number: KR19850000658