SEMICONDUCTOR MEMORY HAVING CIRCUIT EFFECTING REFRESH ON VARIABLE CYCLE

In a semiconductor memory using a dynamic memory device (24), a battery (17a . . . 17c) supplies a power source voltage and a substrate bias voltage when the memory is cut off from an external device, and a refresh control circuit (22) changes the refresh timing of the memory device (24) in accordan...

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Bibliographic Details
Main Authors MIYAUCHI, KATSUKI, SHIMOHAGASHI, KATSUHIRO, KUBO, MASAHARU, MATSUHARA, TOSHIAKI, MINADO, OSAMU
Format Patent
LanguageEnglish
Published 08.03.1993
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:In a semiconductor memory using a dynamic memory device (24), a battery (17a . . . 17c) supplies a power source voltage and a substrate bias voltage when the memory is cut off from an external device, and a refresh control circuit (22) changes the refresh timing of the memory device (24) in accordance with the leakage current of the memory device (24). The power consumption of the memory can thus be reduced and the data can be kept for an extended period without an external power source.
Bibliography:Application Number: KR19840002996