MANUFACTURING METHOD OF FET

• Main Authors: VRATNY, FREDERICK, LYNCH, WILLIAM T
• Format: Patent
• Language: English; Korean
• Published: 04.03.1993
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of fabricating FETs to reduce parasitics. Contact is made to the source and drain regions through a polycrystalline silicon runner which is aligned with the edge of the gate electrode. This is accomplished by providing a layer such as palladium over the gate electrode and depositing the pol...