SILICON CARBIDE BARRIER LAYER BETWEEN SILICON SUBSTRATE AND METAL LAYER

An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion o...

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Bibliographic Details
Main Authors ITO, GIKUO, FURUMURA, YUJI, ESHITA, DAKASHI, MIENO, FUMIDAKE, DOKI, MASAHIKO
Format Patent
LanguageEnglish
Korean
Published 21.09.1992
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD which has an advantage of a good coverage over a step portion such as a contact window.
Bibliography:Application Number: KR19880016837