SILICON CARBIDE BARRIER LAYER BETWEEN SILICON SUBSTRATE AND METAL LAYER
An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion o...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
21.09.1992
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD which has an advantage of a good coverage over a step portion such as a contact window. |
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Bibliography: | Application Number: KR19880016837 |