TREATMENT OF SEMICONDUCTOR BODY USING PROCESS

The process method is to remove the lip happened in ethcing the insulation films. The lip is removed by using low temperature oxide film (4) with 2300-2700 A thickness when etching the double insulation films, each of which is composed of silicon oxide (1200 A) and silicon nitride film (2500 and neg...

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Bibliographic Details
Main Authors SONG GYU-SANG, JANG GI-HO, GWON O-JUN
Format Patent
LanguageEnglish
Published 10.10.1989
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The process method is to remove the lip happened in ethcing the insulation films. The lip is removed by using low temperature oxide film (4) with 2300-2700 A thickness when etching the double insulation films, each of which is composed of silicon oxide (1200 A) and silicon nitride film (2500 and negative photoresist (5) for adhering and controling the etching width (6) of oxide film, resulted in 0.5-3.8 m margin (10).
Bibliography:Application Number: KR19860007438