CMP CHEMICAL MECHANICAL POLISHING CMP COMPOSITION FOR HIGH EFFECTIVE POLISHING OF SUBSTRATES COMPRISING GERMANIUM

하기를 포함하는 화학 기계적 연마 (CMP) 조성물 (Q): (A) 무기 입자, (B) 일반식 (I) 의 화합물; JPEGpat00036.jpg1995 (C) 수성 매질, 여기서 조성물 (Q) 는 pH 가 2 내지 6 임. A chemical mechanical polishing (CMP) composition (Q) comprising: (A) inorganic particles, (B) a compound of general formula (I) (C) an aqueous medium wherein the composition...

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Main Authors SIEBERT MAX, MUENCH ALEXANDRA, HUANG KEVIN, USMAN IBRAHIM SHEIK ANSAR, SIX MANUEL, LAN YONGQING, REICHARDT ROBERT, NOLLER BASTIAN MARTEN, LAUTER MICHAEL, DANIEL GERALD
Format Patent
LanguageEnglish
Korean
Published 27.09.2024
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
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Summary:하기를 포함하는 화학 기계적 연마 (CMP) 조성물 (Q): (A) 무기 입자, (B) 일반식 (I) 의 화합물; JPEGpat00036.jpg1995 (C) 수성 매질, 여기서 조성물 (Q) 는 pH 가 2 내지 6 임. A chemical mechanical polishing (CMP) composition (Q) comprising: (A) inorganic particles, (B) a compound of general formula (I) (C) an aqueous medium wherein the composition (Q) has a pH of from 2 to 6.
Bibliography:Application Number: KR20247031266