Photoelectric conversion device and image sensor including the same

• Main Authors: OH JOON HAK, KIM SEUNG WON, JEONG MOON KI, YI SONG SE, LEE YE SEUL, KWAK BYEONG EUN, LEE JU WON, LEE SANG HYUK, LEE KI RYONG
• Format: Patent
• Language: English; Korean
• Published: 23.09.2024
• Subjects: ELECTRICITY

일부 실시예들에 따른 광전 변환 소자는, 상부 전극; 하부 전극; 및 도너 재료, 억셉터 재료, 및 광 흡수 재료를 포함하며, 상기 상부 전극과 상기 하부 전극 사이에 배치되는 활성 층;을 포함하고, 상기 도너 재료는 화학식 1로 표시되는 화합물을 포함하며, 상기 광 흡수 재료는 BDN(bis-(4-dimethylaminodithiobenzyl)-Ni(Ⅱ))을 포함한다. A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).