PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

• Main Authors: KE YANG, BRANDON WENNING, CHOONG BONG LEE, JAMES F. CAMERON, EMAD AQAD, JAMES W. THACKERAY
• Format: Patent
• Language: English; Korean
• Published: 19.09.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

포토레지스트 조성물은 하이드록시-아릴기를 포함하는 제1 반복 단위 및 산-불안정성기를 포함하는 제2 반복 단위를 포함하는 제1 중합체; 산-불안정성기를 포함하는 제1 반복 단위, 락톤기를 포함하는 제2 반복 단위, 및 염기-가용성기를 포함하는 제3 반복 단위를 포함하는 제2 중합체로서, 상기 염기-가용성기는 pKa가 12 이하이고, 상기 염기-가용성기는 하이드록시-치환된 아릴기를 포함하지 않는, 제2 중합체; 광산 발생제; 및 용매를 포함하고, 상기 제1 중합체 및 제2 중합체는 서로 상이하다. A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.