정확도가 증가된 반도체 웨이퍼의 3D 체적 검사

• Main Authors: NEUMANN JENS TIMO, HUYNH CHUONG, KORB THOMAS, AVISHAI AMIR, KLOCHKOV DMITRY, BUXBAUM ALEX, FOCA EUGEN
• Format: Patent
• Language: Korean
• Published: 09.08.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CALCULATING; CINEMATOGRAPHY; COMPUTING; COUNTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; IMAGE DATA PROCESSING OR GENERATION, IN GENERAL; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MATERIALS THEREFOR; MEASURING; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

처리량이 증가된 반도체 웨이퍼의 체적 검사 시스템 및 방법이 제공된다. 시스템 및 방법은 검사 체적에서 적절한 단면 표면의 감소된 수 또는 영역을 밀링 및 이미징하고 단면 표면 이미지로부터 3D 물체의 검사 파라미터를 결정하도록 구성된다. 방법 및 디바이스는 반도체 웨이퍼 내의 집적 회로의 정량적 계측, 결함 검출, 프로세스 모니터링, 결함 검토, 및 검사에 이용될 수 있다. A system and a method for volume inspection of semiconductor wafers with increased throughput is provided. The system and method are configured for a milling and imaging of reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.