COMPOUND FOR FORMING METAL-CONTAINING FILM COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS

• Main Authors: KOBAYASHI NAOKI, IWAMORI SHOHEI, KORI DAISUKE
• Format: Patent
• Language: English; Korean
• Published: 15.07.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

[과제] 종래의 레지스트 하층막 재료에 대하여 우수한 드라이 에칭 내성을 가짐과 더불어 고도의 매립/평탄화 특성을 겸비하는 금속 함유막 형성용 화합물, 상기 화합물을 이용한 금속 함유막 형성용 조성물 및 상기 조성물을 이용한 패턴 형성 방법을 제공한다. [해결 수단] 금속 함유막 형성용 조성물에 이용하는 금속 함유막 형성용 화합물로서, 상기 화합물이 하기 일반식 (M)으로 표시되는 것을 특징으로 하는 금속 함유막 형성용 화합물. JPEGpat00057.jpg3352 The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is represented by the following general formula (M). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.        Tn-Sn-Qm     (M)