ALD PARTIAL BREAKDOWN OF PRECURSORS FOR ENHANCED ALD FILM GROWTH

• Main Authors: VILJAMI PORE, TOMMI TYNELL
• Format: Patent
• Language: English; Korean
• Published: 08.07.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 원자층 증착(ald)을 사용하여 필름을 형성하기 위한 방법 및 시스템에 관한 것이다. 보다 구체적으로, 본 발명의 방법 및 시스템은 기판의 표면 상에 보다 효율적으로 화학흡착되는 라디칼화된 전구체를 형성하도록 화학적 전구체를 부분적으로 분해하기 위해 원격 저전력 플라즈마를 이용한다. 화학흡착층을 원하는 필름으로 전환시키기 위해 제2 반응물이 도입된다. The present disclosure relates to methods and systems for forming a film using atomic layer deposition (ALD). More particularly, the disclosed methods and systems utilize a remote low-power plasma to partially breakdown a chemical precursor to form a radicalized precursor which more efficiently chemisorbs onto the surface of a substrate. A second reactant is introduced to convert the chemisorb layer into the desired film.