아크릴아미드기함유 레지스트 하층막 형성용 조성물

• Main Authors: OGATA HIROTO, KATO YUKI, TAMURA MAMORU
• Format: Patent
• Language: Korean
• Published: 20.06.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

폴리머 및 용제를 함유하고, 상기 폴리머가, 하기 식(1)로 표시되는 반복단위를 포함하는, EB 또는 EUV 리소그래피용 레지스트 하층막 형성용 조성물. JPEGpct00050.jpg6539 (식(1) 중, R1은, 탄소원자수 1~20의 1가의 유기기를 나타낸다. R2는, 수소원자, 또는 탄소원자수 1~6의 알킬기를 나타낸다.) This composition for forming a resist underlayer film for EB or EUV lithography contains a polymer and a solvent, the polymer containing a repeating unit represented by formula (1). (In formula (1), R1 represents a C1-20 monovalent organic group. R2 represents a hydrogen atom or a C1-6 alkyl group.)