CHEMICAL MECHANICAL POLISHING APPARATUS

• Main Author: KWON DONGHOON
• Format: Patent
• Language: English; Korean
• Published: 05.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; TRANSPORTING; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

화학 기계적 연마 장치가 제공된다. 화학 기계적 연마 장치는 전자석을 포함하고, 회전 가능한 연마 플래튼, 연마 플래튼 위에 위치하고, 제1 자성 물질을 포함하며 전자석과 중첩하는 제1 영역, 및 비자성 물질을 포함하는 제2 영역을 포함하는 하부 연마 패드, 하부 연마 패드 위에 위치하고, 제2 자성 물질을 포함하며 제1 영역과 중첩하는 상부 연마 패드, 및 상부 연마 패드 위에 웨이퍼를 제공하고, 회전 가능한 연마 헤드를 포함한다. A chemical mechanical polishing apparatus includes a polishing platen that includes an electromagnet and is rotatable; a lower polishing pad that is positioned on the polishing platen, the lower polishing pad including a first area and a second area, the first area including a first magnetic material and the second area including a non-magnetic material, wherein the first area overlaps the electromagnet; an upper polishing pad that is positioned on the lower polishing pad, includes a second magnetic material, and overlaps the first area; and a polishing head configured to provide a wafer on the upper polishing pad and is rotatable.