A PROCESSING IMPROVING AGENT FOR VACUUM THIN FILM THIN FILM IMPROVING COMPOSITION CONTAINING THEREOF METHOD FOR FORMING THIN FILM USING THE SAME SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE PREPARED THEREFROM

• Main Authors: YEON CHANG BONG, JUNG JAE SUN
• Format: Patent
• Language: English; Korean
• Published: 03.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 진공 기반 박막 개질제, 이를 포함한 박막 개질 조성물, 이를 이용한 박막 형성 방법, 이로부터 제조된 반도체 기판 및 반도체 소자에 관한 것으로, 소정 구조의 화합물을 진공 기반 박막 개질제로 제공하여 진공 기반의 박막 공정시 증착막의 성장률을 적절히 낮추어 복잡한 구조를 갖는 기판위에 박막을 형성하는 경우에도 단차 피복성(step coverage) 및 박막의 두께 균일성을 크게 향상시킬 수 있고, 식각막의 효율을 개선할 수 있으며, 탄소 등의 불순물 오염이 현저하게 저감되는 효과가 있다. The present invention relates to a vacuum-based thin film modifier, a thin film modifying composition comprising same, a thin film forming method using same, and a semiconductor substrate and semiconductor device manufactured therefrom, wherein a compound with a predetermined structure is provided as a vacuum-based thin film modifier to appropriately lower the growth rate of a deposition film during a vacuum-based thin film process, thereby significantly improving the step coverage and thin film thickness uniformity even when a thin film is formed on a substrate with a complex structure, increasing the efficiency of an etched film, and remarkably reducing the contamination by impurities such as carbon.