Pentanedionic acid Chemically amplified positive photoresist composition containing Pentanedionic acid

The present invention relates to a chemically amplified positive photoresist composition for improving a pattern profile and enhancing adhesion, as a composition of a photoresist capable of exposure with a light source having a wavelength of 248 nm, comprising 1 to 5 wt% of malonic acid with respect...

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Bibliographic Details
Main Authors LEE SU JIN, LEE SEUNG HYUN, CHOI YOUNG CHEOL, LEE SEUNG HUN
Format Patent
LanguageEnglish
Korean
Published 25.04.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention relates to a chemically amplified positive photoresist composition for improving a pattern profile and enhancing adhesion, as a composition of a photoresist capable of exposure with a light source having a wavelength of 248 nm, comprising 1 to 5 wt% of malonic acid with respect to the total composition in order to realize a vertical profile without pattern collapse. 본 발명은, 248nm 파장의 광원으로 노광이 가능한 포토레지스트의 조성물로서, Pattern 쓰러짐(Collapse)이 없는 수직한(Vertical) 프로파일을 구현하기 위하여 Malonic acid를 조성물 전체 대비 1 내지 5 중량%로 포함하는 패턴 프로파일 개선 및 부착력(Adhesion) 증진용 화학증폭형 포지티브 포토레지스트 조성물에 관한 것이다.
Bibliography:Application Number: KR20220133204