탄소 필름의 연속 에피택시 방법

• Main Authors: ZHANG ZHIBIN, WANG EN'GE, LIU KAIHUI
• Format: Patent
• Language: Korean
• Published: 06.02.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

다음 단계를 포함하는, 탄소 필름(carbon film)의 침투 성장(infiltration growth) 방법: S1, 니켈 호일 또는 구리-니켈 합금 호일 중에서 선택되고 제1 표면 및 제2 표면을 갖는 호일을 제공하는 단계; 및 S2, 상기 호일을 기판으로 사용하고 이를 고체 탄소원(solid carbon source) 위에 놓는데, 호일의 제1 표면은 고체 탄소원에 가깝게 놓으면서 호일의 제2 표면은 고체 탄소원에서 멀리 놓은 다음, 호일과 고체 탄소원을 가열하여 침투 성장에 의해 호일의 제2 표면에 탄소 필름이 형성되도록 하는 단계. A method for infiltration growth of a carbon film, comprising the following steps: S1, providing a foil, wherein the foil is selected from a nickel foil or a copper-nickel alloy foil and has a first surface and a second surface; and S2, using the foil as a substrate and placing same on a solid carbon source, wherein the first surface of the foil is close to the solid carbon source, and the second surface of the foil is away from the solid carbon source, and then heating the foil and the solid carbon source, so that a carbon film is formed by infiltration growth on the second surface of the foil.