유기 산 화합물을 포함하는 조성물을 사용하는 방법, 유기 산 화합물을 포함하는 리소그래피 조성물, 및 레지스트 패턴의 제조 방법

[과제] 리소그래피 공정에서 정재파를 저감시키는 방법이 제공된다. [해결수단] 리소그래피 공정에서 정재파를 저감시키기 위해, 특정 구조를 갖는 유기 산 화합물 (AA)을 포함하는 조성물을 사용하는 방법. [Problem] A method for reducing standing wave in a lithography process is provided. [Means for Solution] A method for using a composition comprising an organic acid compound (AA) having...

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Bibliographic Details
Main Authors YANO TOMOTSUGU, KATAYAMA TOMOHIDE
Format Patent
LanguageKorean
Published 01.02.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:[과제] 리소그래피 공정에서 정재파를 저감시키는 방법이 제공된다. [해결수단] 리소그래피 공정에서 정재파를 저감시키기 위해, 특정 구조를 갖는 유기 산 화합물 (AA)을 포함하는 조성물을 사용하는 방법. [Problem] A method for reducing standing wave in a lithography process is provided. [Means for Solution] A method for using a composition comprising an organic acid compound (AA) having a certain structure to reduce standing wave in a lithography process. The distance between the antinode (3) and the node (4) in the direction parallel to the substrate (2) is referred to as the internode distance (5). The internode distance (5) / desired pattern width is referred to as the standing wave index. By reducing standing wave that appears in the resist pattern (1), pattern collapse, which is caused due to undesired shape or formation of a notch, is suppressed and stable formation of a finer pattern is facilitated.
Bibliography:Application Number: KR20237045353