전자 장치의 제조 방법

• Main Authors: YASUI HIROTO, KINOSHITA JIN, KURIHARA HIROYOSHI
• Format: Patent
• Language: Korean
• Published: 12.01.2024
• Subjects: ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; ADHESIVES; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; TRANSPORTING; USE OF MATERIALS AS ADHESIVES; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

회로 형성면을 갖는 웨이퍼와, 웨이퍼의 회로 형성면측에 첩합된 점착성 필름을 구비하는 구조체를 준비하는 공정 (A)와, 웨이퍼의 회로 형성면측과는 반대측의 면을 백그라인드하는 공정 (B)와, 점착성 필름에 자외선을 조사하고, 그 후, 웨이퍼로부터 점착성 필름을 제거하는 공정 (C)를 적어도 구비하는 전자 장치의 제조 방법. 점착성 필름은, 기재층과, 기재층의 한쪽 면측에 마련된, 자외선 경화성 점착성 수지 재료에 의해 구성된 점착성 수지층을 구비한다. 공정 (C)에 있어서, 자외선을 조사한 후의 점착성 필름의 점착성 수지층의, 하기의 조건에서 측정되는, 100℃에 있어서의 저장 탄성률을 E'(100℃)는 1.0×106 내지 3.5×107㎩이고, E'(100℃)/E'(-15℃)는 2.0×10-3 내지 1.5×10-2이다. (조건) 주파수 1㎐, 인장 모드로, 온도 -50 내지 200℃의 범위에서 동적 점탄성을 측정한다. A method for manufacturing an electronic device, the method at least including a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side; and a step (C) of removing the adhesive film from the wafer after the adhesive film is irradiated with an ultraviolet ray. This adhesive film includes a base material layer, and an adhesive resin layer which is provided on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material. In the step (C), regarding the adhesive resin layer of the adhesive film after being irradiated with an ultraviolet ray, a storage elastic modulus at 100°C measured under the following conditions, defined as E' (100°C), is 1.0 × 106 to 3.5 × 107 Pa, and E' (100°C)/E' (-15°C) is 2.0 × 10-3 to 1.5 × 10-2. (Conditions) A dynamic viscoelasticity is measured at a frequency of 1 Hz and a temperature of -50°C to 200°C in a tensile mode.