SUBSTRATE SUPPORTS SEMICONDUCTOR PROCESSING SYSTEMS AND MATERIAL LAYER DEPOSITION METHODS

• Main Authors: WANG WENTAO, HUANG SHUJIN, SU JUNWEI, LIN XING
• Format: Patent
• Language: English; Korean
• Published: 07.12.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

기판 지지부는, 일정 두께만큼 이격된 상부 및 하부 표면을 갖는 디스크 몸체를 포함한다. 상부 표면은, 회전 축에 대해 연장되는 원형 오목부, 오목부에 대해 원주 방향으로 연장되고 오목부 반경 방향 바깥에 있는 환형 렛지부, 렛지부에 대해 원주 방향으로 연장되고 렛지부 반경 방향 바깥에 있는 환형 림부를 갖는다. 오목부는 원형 천공부 및 환형 비천공부를 갖는다. 천공부는 회전 축에 대해 연장되고, 기판 지지부 상에 안착된 기판의 배면과 오목부 사이에 정의된 공동 내로 에천트를 배출하기 위한 둘 이상의 천공을 정의한다. 비천공부는 천공부의 반경 방향 바깥에 있고, 천공부에 대해 원주 방향으로 연장되어 에천트에 의한 기판 배면의 식각을 제한한다. 반도체 처리 시스템 및 재료 층 증착 방법이 또한 설명된다. A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.