반도체 제조 장치 및 반도체 제조 장치용의 부품

• Main Author: SATOH NAOYUKI
• Format: Patent
• Language: Korean
• Published: 21.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

[요약] 처리 챔버와, 상기 처리 챔버 내에 마련되며, 기판을 보지하는 기판 지지부와, 상기 기판 지지부에 대향하며, 가스 도입구를 갖는 플레이트와, 상기 플레이트를 지지하며, 상기 기판의 주위를 둘러싸는 원통 부재를 구비하고, 상기 플레이트 및 상기 원통 부재는 CVD에 의해 성막된 SiC막을 갖는 SiC 부재의 부품이며, 상기 원통 부재는 하중에 대해 변형이 가능한 제 1 부분을 갖는, 반도체 제조 장치가 제공된다. Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.