클리닝 방법 및 플라스마 처리 장치

• Main Authors: NAKAHATA KENICHI, NOGAMI TAKAFUMI, NAKANO YOSHIKI
• Format: Patent
• Language: Korean
• Published: 16.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

특정 공정은, 플라스마 클리닝의 조건으로 된, 처리 용기의 내면에 마련한 보호막에 대한 대미지양 및 처리 용기 내에 퇴적되는 퇴적물을 제거하는 클리닝 레이트로부터, 플라스마 클리닝 시의 처리 용기 내의 압력을 특정한다. 클리닝 공정은, 클리닝 가스를 처리 용기 내에 공급하면서 처리 용기 내의 압력을 특정 공정에서 특정한 압력으로 조정하고, 마이크로파에 의해 처리 용기 내에 플라스마를 생성해서 처리 용기 내를 플라스마 클리닝한다. In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container.