제올라이트막의 제조 방법, 가스 흡착제 및 가스 흡착 장치

• Main Authors: SAKAMOTO HITOSHI, SATO EIJI
• Format: Patent
• Language: Korean
• Published: 07.11.2023
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SEPARATION; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

ALD 사이클의 실시에 의해 제올라이트막을 성막하는 방법으로서, ALD 사이클은 산화실리콘막 형성 공정과, 산화알루미늄막 형성 공정을 포함한다. 산화실리콘막 형성 공정은 제1 원료 가스로서 유기 Si 화합물을 사용하고, 반응 가스로서 OH라디칼을 사용하며, 산화알루미늄막 형성 공정은 제2 원료 가스로서 유기 Al 화합물을 사용하고, 반응 가스로서 OH라디칼을 사용하며, 산화실리콘막 및 산화알루미늄막을 정순 또는 역순으로 교대로 형성하여 제올라이트막을 성막한다. A method for forming a zeolite membrane by performing an ALD cycle, the ALD cycle including a silicon oxide film forming step and an aluminum oxide film forming step. In the silicon oxide film forming step, an organic Si compound is used as a first raw material gas and OH radicals are used as a reaction gas; in the aluminum oxide film forming step, an organic Al compound is used as a second raw material gas and OH radicals are used as a reaction gas; and the silicon oxide films and the aluminum oxide films are alternately formed in forward or reverse order to form the zeolite membrane.