균일한 그래핀의 CVD 성장을 위한 웨이퍼 및 이의 제조 방법

• Main Authors: DIXON SEBASTIAN, KAINTH JASPREET, JAGT ROBERT
• Format: Patent
• Language: Korean
• Published: 23.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

균일한 그래핀의 CVD 성장을 위한 웨이퍼 및 이의 제조 방법 700℃ 초과의 온도에서 균일한 그래핀의 CVD 성장을 위한 웨이퍼가 제공되며, 웨이퍼는 평면형 규소 기판, 규소 기판 전반에 걸쳐 제공되는 절연층, 및 절연층 전반에 걸쳐 제공되는 배리어층을 순서대로 포함하며, 절연층은 질화규소 및/또는 질화알루미늄 층이고, 배리어층은 50 nm 이하의 일정한 두께를 갖고, 균일한 그래핀의 CVD 성장을 위한 성장면을 제공한다. A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.