15 13/15 15 USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT COMPOUNDS

• Main Authors: RINGLER BENJAMIN, VON HAENISCH CARSTEN, VOLZ KERSTIN, STERZER EDUARD, BEYER ANDREAS, KEIPER DOMINIK, STOLZ WOLFGANG
• Format: Patent
• Language: English; Korean
• Published: 11.10.2023
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 증착 공정에서 반응물로서 일반식 R1R2E-E'R3R4 (I) 또는 R5E(E'R6R7)2 (II)의 적어도 하나의 이성분 15족 원소 화합물의 용도를 제공한다. 이 경우, R1, R2, R3 및 R4는 H, 알킬 라디칼(C1 - C10) 및 아릴 기로 이루어진 군에서 독립적으로 선택되고, E 및 E'는 N, P, As, Sb 및 Bi로 이루어진 군에서 독립적으로 선택된다. 이 용도는 히드라진 및 이의 유도체를 배제한다. 본 발명에 따른 이성분 15족 원소 화합물은 비교적 낮은 공정 온도에서 정해진 배합의, 다성분의, 균질한 초고순도 13/15 반도체의 재현성 있는 생산 및/또는 침착의 실현을 가능하게 한다. 이는 질소 소스로서 1.1 디메틸 히드라진과 같은 유기적으로 치환된 질소 화합물의 사용을 완전히 피할 수 있게 하며, 이는 공지된 제조 방법으로 제조되는 13/15 반도체 및/또는 13/15 반도체 층과 비교하여 질소 오염을 현저하게 감소시킨다. The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E′R3R4 (I) or R5E(E′R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations-compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.