HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS

• Main Authors: KIM SEUNGHYUN, PARK SANGCHOL, SHIN SEUNG WOOK, CHOE HUISEON, KIM SANGMI, WON DONGHOON
• Format: Patent
• Language: English; Korean
• Published: 04.10.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

Provided are a hard mask composition and a method for forming patterns by using the same, wherein the hard mask composition comprises: (i) a polymer containing a structural unit represented by the following chemical formula 1; (ii) a compound containing a moiety represented by the following chemical formula 2; or (iii) a combination of the polymer (i) and the compound (ii); and a solvent. [Chemical formula 1] [Chemical formula 2] In the chemical formula 1 and 2, A^1, R^1, R^2, and * are same as described in the specification. (i) 하기 화학식 1로 표현되는 구조단위를 포함하는 중합체, (ii) 하기 화학식 2로 표현되는 모이어티를 포함하는 화합물, 또는 (iii) 상기 (i)의 중합체와 상기 (ii)의 화합물의 조합, 및 용매를 포함하는 하드마스크 조성물, 및 상기 하드마스크 조성물을 이용한 패턴 형성 방법을 제공한다: [화학식 1] [화학식 2] JPEGpat00032.jpg3259JPEGpat00033.jpg2950 상기 화학식 1 및 화학식 2의 A1, R1, R2, 및 * 은 각각 명세서에 기재된 바와 같다.