GAS CLEANING METHOD METHOD OF PROCESSING SUBSTRATE METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE PROGRAM AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: KOBAYASHI TAKAHIRO, HARADA TORU, HORII SADAYOSHI, NAKAMURA IWAO, NOMURA HISASHI
• Format: Patent
• Language: English; Korean
• Published: 26.09.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention is to provide a technology for forming a film with a more uniform thickness on the surface of a substrate. A gas cleaning method comprises a process (a) of supplying a chlorine-containing gas without supplying an oxygen-containing gas into a processing chamber to remove a first metal element as one of contaminants from the processing chamber, and a process (b) of supplying the oxygen-containing gas into the processing chamber to remove a second metal element as another contaminant from the processing chamber, wherein the process (b) is performed after the process (a). 본 발명은, 보다 균일한 막 두께의 막을 기판의 표면 상에 성막할 수 있는 기술을 제공하는 데 있다. 가스 클리닝 방법이며,가스 클리닝 방법이며, (a) 처리실 내에 산소 함유 가스를 공급하지 않고 염소 함유 가스를 공급하여, 상기 처리실로부터 오염물질의 하나로서 제1 금속 원소를 제거하는 공정과, (b) 상기 처리실 내에 상기 산소 함유 가스를 공급하여, 상기 처리실로부터 상기 오염물질의 다른 하나로서 제2 금속 원소를 제거하는 공정을 포함하고,상기 공정 (b)는 상기 공정 (a) 후에 행하는, 가스 클리닝 방법.