MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS

The present disclosure relates to a magnetoresistive random access memory (MRAM) cell having an extended upper part electrode and a forming method thereof. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged on top of a conductive lower part electrode. Two protective lay...

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Bibliographic Details
Main Authors CHEN SHENG CHANG, WANG HUNG CHO, HUANG SHENG HUANG, CHUANG HARRY HAK LAY
Format Patent
LanguageEnglish
Korean
Published 25.09.2023
Subjects
ELECTRICITY
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Summary:The present disclosure relates to a magnetoresistive random access memory (MRAM) cell having an extended upper part electrode and a forming method thereof. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged on top of a conductive lower part electrode. Two protective layers sequentially surround the side walls of the MTJ. The two protective layers have an etching selectivity for each other. 본 개시는 연장된 상부 전극을 갖는 자기 저항 랜덤 액세스 메모리(MRAM) 셀 및 그 형성 방법에 관한 것이다. 몇몇 실시형태에서, MRAM 셀은 전도성 하부 전극 위에 배열되는 자기 터널 접합(MTJ)을 갖는다. 두 개의 보호 층이 MTJ의 측벽을 순차적으로 둘러싼다. 두 개의 보호 층은 서로에 대해 에칭 선택비를 갖는다.
Bibliography:Application Number: KR20230120451