LIGHT DETECTING ELEMENT MULTILAYER LIGHT DETECTING ELEMENT AND LIGHT DETECTING DEVICE

촬상 소자는, 적어도, 제1 전극, 제2 전극, 유기 광전변환층 및 캐리어 블로킹층을 구비하고 있고, 캐리어 블로킹층은, 하기한 구조식(1)을 갖는 재료로 이루어지고, 두께가 5×10-9m 내지 1.5×10-7m이다. JPEGpat00024.jpg23100 An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrie...

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Bibliographic Details
Main Authors MOGI HIDEAKI, MURATA MASAKI, KUMAGAI YUYA, HIRATA SHINTAROU, UJIIE YASUHARU
Format Patent
LanguageEnglish
Korean
Published 25.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:촬상 소자는, 적어도, 제1 전극, 제2 전극, 유기 광전변환층 및 캐리어 블로킹층을 구비하고 있고, 캐리어 블로킹층은, 하기한 구조식(1)을 갖는 재료로 이루어지고, 두께가 5×10-9m 내지 1.5×10-7m이다. JPEGpat00024.jpg23100 An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5 × 10 -9 to 1.5 × 10 -7 m:
Bibliography:Application Number: KR20237027308