METAL OXIDE SEMICONDUCTOR THIN FILM PREPARING METHOD OF THE SAME AND OXIDE THIN FILM TRANSISTOR COMPRISING THE SAME

The present invention relates to a metal oxide semiconductor thin film. The oxide semiconductor thin film includes a metal oxide to which chalcogen anions are added. The metal oxide includes a metal selected from a group consisting of indium, tin, zinc, cadmium, and combinations thereof. Therefore,...

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Bibliographic Details
Main Authors LEE PAUL, KIM MYUNGGIL, YONG HOON KIM, SUNG KYU PARK
Format Patent
LanguageEnglish
Korean
Published 17.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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