METAL OXIDE SEMICONDUCTOR THIN FILM PREPARING METHOD OF THE SAME AND OXIDE THIN FILM TRANSISTOR COMPRISING THE SAME

The present invention relates to a metal oxide semiconductor thin film. The oxide semiconductor thin film includes a metal oxide to which chalcogen anions are added. The metal oxide includes a metal selected from a group consisting of indium, tin, zinc, cadmium, and combinations thereof. Therefore,...

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Bibliographic Details
Main Authors LEE PAUL, KIM MYUNGGIL, YONG HOON KIM, SUNG KYU PARK
Format Patent
LanguageEnglish
Korean
Published 17.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a metal oxide semiconductor thin film. The oxide semiconductor thin film includes a metal oxide to which chalcogen anions are added. The metal oxide includes a metal selected from a group consisting of indium, tin, zinc, cadmium, and combinations thereof. Therefore, it is possible to overcome the limitations of metal cation-centered metal oxide semiconductor materials. 본원은 칼코겐 음이온이 첨가된 금속 산화물을 포함하고, 상기 금속 산화물은 인듐, 주석, 아연, 카드뮴 및 이들의 조합들로 이루어진 군에서 선택되는 금속을 포함하는 것인, 금속 산화물 반도체 박막에 대한 것이다.
Bibliography:Application Number: KR20220016604