STRESS REDUCING METHOD

• Main Authors: YAMASAKI HIDEAKI, KAWAGUCHI TAKUYA, HOTTA TAKANOBU
• Format: Patent
• Language: English; Korean
• Published: 26.07.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a stress reduction method which can easily reduce the tensile stress of a tungsten film deposited on a member in a chamber when forming a tungsten film on a substrate using a tungsten raw material gas and a reducing gas. The stress reduction method comprises: a process of preparing a film forming device to supply a tungsten raw material gas and a reducing gas to a chamber to form a tungsten film on a substrate in the chamber; and, when performing precoat in the chamber and/or forming a tungsten film on the substrate using the tungsten raw material gas and reducing gas, a process of converting at least a portion of the tungsten film deposited on a member in the chamber into a chlorine-containing tungsten film whose film stress is reduced by adjusting the chlorine concentration. [과제] 텅스텐 원료 가스와 환원 가스에 의해 기판에 텅스텐막을 성막할 때에 챔버 내 부재에 퇴적되는 텅스텐막의 인장 응력을 간편하게 저감할 수 있는 응력 저감 방법을 제공한다. [해결수단] 텅스텐 원료 가스 및 환원 가스를 챔버에 공급하여 챔버 내의 기판 상에 텅스텐막을 성막하는 성막 장치를 준비하는 공정과, 텅스텐 원료 가스 및 환원 가스를 사용하여 챔버 내의 프리코트 및/또는 기판 상에의 텅스텐막의 성막을 실행할 때에 챔버 내 부재에 퇴적되는 텅스텐막의 적어도 일부를, 염소 농도를 조정함으로써 막 응력을 저감한 염소 함유 텅스텐막으로 하는 공정을 갖는다.