HARDMASK COMPOSITION HARDMASK LAYER AND METHOD OF FORMING PATTERNS

• Main Authors: KIM SEUNGHYUN, PARK SANGCHOL, SHIN SEUNG WOOK, PARK YUSHIN, CHOI SEIL, CHOE HUISEON, KIM SANGMI
• Format: Patent
• Language: English; Korean
• Published: 18.07.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

The present invention relates to a hardmask composition containing a polymer containing a structural unit represented by the formula 1, and a solvent, a hardmask layer prepared from the hardmask composition, and a method of forming a pattern from the hardmask composition, wherein the definition of the formula 1 is as described in the specification. One embodiment of the present invention provides the hardmask composition which can be effectively applied to the hardmask layer. 하기 화학식 1로 표시되는 구조단위를 포함하는 중합체, 및 용매를 포함하는 하드마스크 조성물, 상기 하드마스크 조성물로부터 제조되는 하드마스크 층, 그리고 상기 하드마스크 조성물로부터 패턴을 형성하는 방법에 관한 것이다: [화학식 1] JPEGpat00066.jpg5563 상기 화학식 1의 정의는 명세서 내 기재한 바와 같다.