Layer deposition apparatus having exhaust ports for multi-stage substrates

• Main Authors: KIM SANG YEOP, CHEON MIN HO, SEO DONG WON
• Format: Patent
• Language: English; Korean
• Published: 18.07.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a layer deposition apparatus having an exhaust port structure for a multi-stage substrate, which may relieve a lack of uniformity of the temperature and pressure of exhaust gas emitted from an exhaust port from each stage. The layer deposition apparatus comprises: a chamber which processes a plurality of substrates; a plurality of heater members which correspond to a lower surface of each of the plurality of substrates in the chamber and are disposed in vertical multi-stages to heat the plurality of substrates; a support column which integrally couples and supports the plurality of heater members; a plurality of spray ports which are disposed on one side wall of the chamber to correspond to the plurality of substrates, and are disposed in vertical multi-stages to supply processing gas to the plurality of substrates; a plurality of exhaust ports which are disposed on the opposite side wall of the chamber to correspond to the plurality of substrates, and are disposed in the vertical multi-stages so that the processing gas emits exhaust gas left after depositing the plurality of substrates; and a buffer cavity which communicates with each of the plurality of exhaust ports and is formed in the opposite side wall of the chamber. In addition, the buffer cavity collets and buffers exhaust gas provided from each of the plurality of exhaust ports, and the buffered exhaust gas is emitted to the outside of the chamber through a gas emission hole. 박막 증착 장치는, 복수의 기판을 처리하는 챔버와, 상기 챔버 내에서, 상기 복수의 기판 각각의 하면에 대응하며, 상기 복수의 기판을 가열하도록 수직 다계층으로 배치되는 복수의 히터부재와, 상기 복수의 히터부재를 일체로 결합하면서 지지하는 지지 칼럼과, 상기 복수의 기판에 대응하도록 상기 챔버의 일측벽에 배치되며, 상기 복수의 기판에 공정 가스를 공급하도록 수직 다계층으로 배치되는 복수의 분사 포트와, 상기 복수의 기판에 대응하도록 상기 챔버의 반대쪽 측벽에 배치되며, 상기 공정 가스가 상기 복수의 기판을 증착한 후에 남은 배기 가스를 배출하도록 수직 다계층으로 배치되는 복수의 배기 포트와, 상기 복수의 배기 포트 각각과 연통되면서 상기 챔버의 반대쪽 측벽 내에 형성된 버퍼 캐비티로 이루어진다. 또한, 상기 버퍼 캐비티는 상기 복수의 배기 포트 각각으로부터 제공된 배기 가스를 취합하여 완충하고, 상기 완충된 배기 가스는 가스 배출구를 통해 상기 챔버 외부로 배출된다.